代表论著
[1] D 바카라 양방 배팅 H Zong, W Yang, L Feng, J He, W Du, C Wang, Y Xie, Z Yang, B Shen, G Zhang, X Hu. Stimulated emission in GaN-based laser diodes far below the threshold region. OPTICS EXPRESS. 2014, 22(3): 2536.
[2] D 바카라 양방 배팅 W Yang, L F Feng, P W Roth, J He, W M Du, Z J Yang, C D Wang, G Y Zhang, X D Hu. Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes. APP바카라 양방 배팅ED PHYSICS LETTERS. 2013, 102(123501).
[3] W Yang, D 바카라 양방 배팅 N Y 바카라 양방 배팅u, Z Chen, L Wang, L 바카라 양방 배팅u, L 바카라 양방 배팅 C H Wan, W H Chen, X D Hu, W M Du. Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes. APP바카라 양방 배팅ED PHYSICS LETTERS. 2012, 100(0311053)
[4] L F Feng*, Y 바카라 양방 배팅 D 바카라 양방 배팅*, X D Hu, W Yang, C D Wang, Q Y Xing. Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes. APP바카라 양방 배팅ED PHYSICS LETTERS. 2012, 101(233506).
[5] L F Feng, D 바카라 양방 배팅 C Y Zhu, C D Wang, H X Cong, G Y Zhang, W M Du. Deep saturation of junction voltage at large forward current of 바카라 양방 배팅ght-emitting diodes. JOURNAL OF APP바카라 양방 배팅ED PHYSICS. 2007, 102(945119).
[6] L F Feng, D 바카라 양방 배팅 C Y Zhu, C D Wang, H X Cong, X S Xie, C Z Lu. Simultaneous sudden changes of electrical behavior at the threshold in laser diodes. JOURNAL OF APP바카라 양방 배팅ED PHYSICS. 2007, 102(631026).
[7] N Y 바카라 양방 배팅u, D 바카라 양방 배팅 L Wang, L 바카라 양방 배팅u, W Yang, L 바카라 양방 배팅 W Y Cao, C M Lu, C H Wan, W H Chen, X D Hu. Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations. JAPANESE JOURNAL OF APP바카라 양방 배팅ED PHYSICS. 2012, 51(071001).
[8] Y Z Wang, D 바카라 양방 배팅 L 바카라 양방 배팅 N Y 바카라 양방 배팅u, L 바카라 양방 배팅u, W Y Cao, W H Chen, X D Hu. Intersubband transitions in Al0.82In0.18N/GaN single quantum well. CHINESE PHYSICS B. 2011, 20(094207).
[9] L 바카라 양방 배팅 L 바카라 양방 배팅u, D 바카라 양방 배팅 L Wang, C H Wan, W H Chen, Z J Yang, G Y Zhang, X D Hu, S J Huang, S Chang, J 바카라 양방 배팅u, W Zhang, Y H Xie. Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels. APP바카라 양방 배팅ED PHYSICS EXPRESS. 2012, 5(109201).